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| an == AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic`MetaUCeramic Package Absolute Maximum Ratings at 25C Parameter Symbol Rating 65 3.0 7.0 Units Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation Junction Temperature StorageTemperature VCES VES0 `c PTOi TJ TSW V V A w / "C .167=.010 190 200 I UNLYSS O-HfRW:S: KGTZD, Y--RANKS ARE .06O=.CO3 u.s2:.05: iNCHES :MILL,METERS 1' =.005-' r,13MMj -65 to+200 j 0~ Electrical Characteristics at 25C Broadband Test Fixture Impedances F(GHr) 2.70 2.90 3.10 TZST ?iXTdR' INPUT 1 f.:RCLI:T TEST rIXTURE OUTPUT CiRtUIT Z,,(Q) 6.9 - j12.2 Z,,(Q) 4.5 - j6.8 I 6.0 - jl 1.7 5.2-j10.0 I 3.9 - j6.1 iI 3.4 - j4.8 Specifications Subject to Change Without Notlce. Radar Pulsed Power Transistor, 75W PH2731-75L v2.00 RF Test Fixture ., INPUT 50 OHMS OUTPUT 50 DHMS ARTWURK DIMENSIONS IN MILS /-IS-l- FT4Rl--S Cl c2 Ql 36 pF ATC SIZE 50 UF 50 VOLTS PH2731-75L ROGERS 6010,s A BOARD TYPE: ,025" THICK, ER = 1015 |
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